Sputtering from oblique ion incidence using computer simulation technique.
Holcombe, Horace Truman
Harrison, D.E. Jr.
MetadataShow full item record
A self-contained computer simulation of sputtering from 20 keV incident ions is not possible with present computers. However, a simulation can be done by considering primary and secondary collisions separately. An investigation of 20 keV argon ions incident obliquely on the (100) surface of a face-centered cubic copper crystal was done at angles from 29 to 6l degrees from normal. Results strongly support the concept of transparency, but indicate that focused collision sequences make very limited contributions to sputtering. Depending on the ion beam incidence angle, up to 25 percent of the sputtering may be due to random collision cascades initiated by deep primary collisions. The remainder is caused by surface collision mechanisms. Reflection of incident ions off surface atoms significantly affects argon-copper sputtering when the ions are obliquely incident.
RightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
Showing items related by title, author, creator and subject.
An investigation of cascade energy density effects using classical trajectory simulations of sputtering by molecular ions. Mason, William A. (Monterey, California. Naval Postgraduate School, 1983-06);The NPS computer simulation model was modified to study sputtering by molecular ions. The simulations were performed on a Cu(111) surface for normally incident O⁺₂ ions at 0.5, 1.25, 2.5, and 5.0 kev/ion. The ...
Harrison, Don E. Jr.; Moore, W.L. Jr.; Holcombe, H.T (1973-01-01);The conclusions of the first paper in this series have been confirmed by simulations in which the copper target is represented by a composite potential function consisting of a Born-Mayer repulsive potential segment, a ...
Correlation of argon-copper sputtering mechanisms with experimental data using a digital computer simulation technique Effron, Herbert M. (Monterey, California. U.S. Naval Postgraduate School, 1967-06);The sputtering process has been investigated by simulating the sputtering of single-crystal copper with 1=7 keV argon. A digital computer was used to build the crystal, bombard it, and move crystal atoms. Four mechanisms ...