Charge transport study of InGaAs two-color QWIPs
Hoang, Vu Dinh
Haegel, Nancy M.
Powers, John P.
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In this thesis, a series of experiments were performed to characterize the material properties of InGaAs/GaAs for use in a two-color quantum-well IR photodetector (QWIP) design. Results from room temperature studies using cathodoluminescence and photoluminescence indicated light emission at 858 nm and 1019 nm from GaAs and InGaAs, respectively. Using a direct transport imaging technique, an edge dislocation pattern was observed and shown to be confined to the InGaAs layer of the material. A dislocation density measurement was performed and was shown to be less than 2000 lines/cm. Quantitative intensity level measurements indicated fluctuation in the region of dislocations to be less than 30% of the signal to background level. Finally, a spot mode study using the direct transport imaging method was performed to evaluate the feasibility of using this technique for contact-less diffusion length measurements.
RightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
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