A study of effects of high energy electron radiation on selected electronic devices.

Abstract

This study investigates the behavior of TTL NAND Gates (Signetics SE480Q) and MOS Field Effect Transistors (2N4067) in an electron radiation environment (produced by the Naval Postgraduate School Linear Accelerator). The electron radiation within two planetary radii of Jupiter is estimated to be of the order of 5 X 10⁷ electrons per square centimeter per second. The "Grand Tour" outer planets space probe was to spend about ten hours in this environment thus receiving an exposure of about 2 X 10¹² eˉ/cm². Exposures of about 10¹⁵ eˉ/cm² for TTL NAND Gates and 10¹⁴eˉ/cm² for the MOSFETS were required before failure or serious degradation of performance occurred. Therefore, in the electron environment near Jupiter, satisfactory operation should be expected for about 500 hours for the MOSFETS and 5000 hours for the TTL NAND Gates.