Study of heterojunction Pb(1-x)Sn(x)Te diodes

Abstract

A new procedure of using metal rich (Pb(1-x)Sn(x)) (1-d)Te alloy source in a graphite boat deposition method has been developed in preparing n-type Pb(0.8)Sn(0.2)Te thin films of carrier concentration in the low 10(17)cm(-3) range without annealing. Using this procedure, single heterojunction Pb(1-x)Sn(x)Te diodes have been made by sequential depositions of p-type Pb(0.86)Sn(0.14)Te and n-type PB(0.80)Sn(0.20)Te thin films on cleaved I100) KBL substrates. Diodes were made by using gold deposition and silver epoxy contacts. Rectifying fopdes of R(o)A values as high as 600 ohm-cm(2) have been obtained. A theoretical analysis was carried out in calculating the laser performance of a double heterojunction Pb(1-x)Sn(x)Te diodes. Its results will be used as guidelines for continuing experimental research and development. IT was calculated that at liquid nitrogen temperature, lasting threshold is between 200 to 300 amp/cm(2) and power output in the milliwatt range can be achieved with moderate biasing.