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dc.contributor.advisorTao, T.F.
dc.contributor.authorFernandez, Jose Manuel
dc.dateDecember 1972
dc.date.accessioned2012-11-13T23:44:32Z
dc.date.available2012-11-13T23:44:32Z
dc.date.issued1972-12
dc.identifier.urihttp://hdl.handle.net/10945/16379
dc.description.abstractA new procedure of using metal rich (Pb(1-x)Sn(x)) (1-d)Te alloy source in a graphite boat deposition method has been developed in preparing n-type Pb(0.8)Sn(0.2)Te thin films of carrier concentration in the low 10(17)cm(-3) range without annealing. Using this procedure, single heterojunction Pb(1-x)Sn(x)Te diodes have been made by sequential depositions of p-type Pb(0.86)Sn(0.14)Te and n-type PB(0.80)Sn(0.20)Te thin films on cleaved I100) KBL substrates. Diodes were made by using gold deposition and silver epoxy contacts. Rectifying fopdes of R(o)A values as high as 600 ohm-cm(2) have been obtained. A theoretical analysis was carried out in calculating the laser performance of a double heterojunction Pb(1-x)Sn(x)Te diodes. Its results will be used as guidelines for continuing experimental research and development. IT was calculated that at liquid nitrogen temperature, lasting threshold is between 200 to 300 amp/cm(2) and power output in the milliwatt range can be achieved with moderate biasing.en_US
dc.description.urihttp://archive.org/details/studyofheterojun1094516379
dc.language.isoen_US
dc.publisherMonterey, California. Naval Postgraduate Schoolen_US
dc.rightsCopyright is reserved by the copyright owneren_US
dc.titleStudy of heterojunction Pb(1-x)Sn(x)Te diodesen_US
dc.title.alternativeNAen_US
dc.typeThesisen_US
dc.contributor.corporateNaval Postgraduate School (U.S.)
dc.contributor.departmentElectrical Engineering
dc.subject.authorHeterojunction Pb(1-x)Sn(x)Teen_US
dc.description.serviceLieutenant, Chilean Navyen_US
etd.thesisdegree.nameM.S. in Electrical Engineeringen_US
etd.thesisdegree.levelMastersen_US
etd.thesisdegree.disciplineElectrical Engineeringen_US
etd.thesisdegree.grantorNaval Postgraduate Schoolen_US
dc.description.distributionstatementApproved for public release; distribution is unlimited.


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