Feasibility study of Pb(1-x)Sn(x)Te charge coupled devices for infrared imaging applications
Doshier, Alan Jeffrey
Tao, T. F.
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The purpose of this thesis is to examine the feasibility of narrow-gap semiconductor charged coupled devices for infrared imaging applications. The semiconductors considered are PbTe for a three to five micron imager and Pb(.76)Sn(.24)Te for an eight to 12 micron imager, both operated at a temperature of 85 degrees K. Theoretical calculation of signal current and storage time are made based on the metal-insulate-semiconductor theory developed for silicon M-I-S devices. For a 0.1 degrees K temperature resolution of a 300 degree scene, signal currents are 4.8X10(-6) A/cm(2) for PbTe and 3.2X10(-2) A/cm(2) for PB(.76)Sn(.24)Te at a clocking frequency of 1 MHz. Storage times of 5.7X10(-5) seconds for PbTe and 1.27X10(-6) seconds for Pb(.76)Sn(.24)Te are calculated using a minority lifetime of 10(-7) seconds. Therefore, clocking frequencies higher than 1 MHz are recommended. Experimental studies of Pb(1-x)Sn(x)Te M-I-S were made which demonstrated that accumulation, depletion, and inversion layers can be controlled by gate voltage, following the general behavior of silicon M-I-S devices. A PbTe CCD infrared imager seems feasible. Feasibility of Pb(.76)Sn(.24)Te CCDs will require significant improvements in material and fabrication technology to increase storage time and reduce dark content.
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