Transport imaging for the study of quantum scattering phenomena in next generation semiconductor devices
Bradley, Frank Mitchell
Haegel, Nancy M.
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The minority carrier diffusion length is a critical parameter in the development of next generation Heterostructure Bipolar Transistors (HBT) and highly efficient solar cells. A novel technique has been developed utilizing direct imaging of electron/hole recombination via an optical microscope and a high sensitivity charge coupled device coupled to a scanning electron microscope to capture spatial information about the transport behavior (diffusion lengths/drift lengths) in luminescent solid state materials. In this work, a numerical model was developed to do a multi-parameter least squares analysis of transport images. Results were applied to the study of transport in materials at the forefront of device technology that are affected by quantum scattering effects, where few reliable experimental measurements exist. The technique allows for easy localization of the measurement site, broad application to a range of materials and potential industrial automation to aid electronics for terahertz devices.
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