Show simple item record

dc.contributor.advisorHaegel, Nancy M.
dc.contributor.authorBradley, Frank Mitchell
dc.date.accessioned2012-03-14T17:33:19Z
dc.date.available2012-03-14T17:33:19Z
dc.date.issued2005-12
dc.identifier.urihttp://hdl.handle.net/10945/1851
dc.descriptionApproved for public release; distribution is unlimiteden_US
dc.description.abstractThe minority carrier diffusion length is a critical parameter in the development of next generation Heterostructure Bipolar Transistors (HBT) and highly efficient solar cells. A novel technique has been developed utilizing direct imaging of electron/hole recombination via an optical microscope and a high sensitivity charge coupled device coupled to a scanning electron microscope to capture spatial information about the transport behavior (diffusion lengths/drift lengths) in luminescent solid state materials. In this work, a numerical model was developed to do a multi-parameter least squares analysis of transport images. Results were applied to the study of transport in materials at the forefront of device technology that are affected by quantum scattering effects, where few reliable experimental measurements exist. The technique allows for easy localization of the measurement site, broad application to a range of materials and potential industrial automation to aid electronics for terahertz devices.en_US
dc.format.extentxiv, 97 p. : col. ill. ;en_US
dc.publisherMonterey, California. Naval Postgraduate Schoolen_US
dc.rightsThis publication is a work of the U.S. Government as defined
in Title 17, United States Code, Section 101. As such, it is in the
public domain, and under the provisions of Title 17, United States
Code, Section 105, is not copyrighted in the U.S.en_US
dc.subject.lcshElectron microscopesen_US
dc.subject.lcshMathematical modelsen_US
dc.subject.lcshSolar cellsen_US
dc.subject.lcshPhysicsen_US
dc.titleTransport imaging for the study of quantum scattering phenomena in next generation semiconductor devicesen_US
dc.typeThesisen_US
dc.contributor.secondreaderLuscombe, James
dc.contributor.corporateNaval Postgraduate School (U.S.)
dc.contributor.departmentDepartment of Physics
dc.description.recognitionOutstanding Thesisen_US
dc.identifier.oclc62880333
etd.thesisdegree.nameM.S.en_US
etd.thesisdegree.levelMastersen_US
etd.thesisdegree.disciplinePhysicsen_US
etd.thesisdegree.grantorNaval Postgraduate Schoolen_US
etd.verifiednoen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record