InP:Fe and GaAs:Ce picosecond photoconductive radiation detectors
Keipper, Phillip J.
Buskirk, Fred R.
Neighbors, John R.
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The dark current, impulse and square-pulse response measurements of photoconductive devices fabricated from two different types of materials, Gallium Arsenide with Chromium dopant (GaAs:Cr) and Indium Phosphide with Iron dopant (InP:Fe), are reported. These devices have been subjected to irradiation from the Naval Postgraduate School S-band Electron Linear Accelerator (LINAC) with an energy of 100 MeV at room temperature. Fluence ranged between 10(13) and 10(16) electrons/cm2 . Dark current decreases with increasing fluence for the GaAs:Cr devices whereas InP :Fe shows an increase in the dark current. Both types of materials exhibit extremely fast impulse response after the irradiation. Electron mobility, drift velocity and response speed decrease with increasing fluence. Response speeds < 100-ps are achieved by fast carrier relaxation in the semiconductor due to the introduction of trapping and recombination centers resulting from the irradiation damage. The GaAs:Cr, unlike the InP:Fe, more closely follows the longer square-pulse exhibiting no nonlinearity. All results are consistent with previously investigated neutron irradiated devices.
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