The radiation effects of high energy electrons upon thermionic integrated circuits
radiationeffects00argu.pdf (5.454Mb)Abstract
Thermionic Integrated Circuit (TIC) devices use a
hybrid of vacuum tube and integrated circuit technology. The
integrated circuitry is fabricated on a sapphire (Al ; ,0- ; )
substrate. A device was irradiated to attempt to establish
a total dose (measured in rad Si) of radiation to cause the
TIC device to malfunction. The TIC device was irradiated
using 30 and 100 Mev electrons provided bv the Naval
Postgraduate School Linear Accelerator (LINAC). The device
received a total dose of 1.8155x10s' rad Si during the course
of the experiments. It continued to function normal lv
throughout the irradiation study, so it is concluded that
the device is not sensitive to radiation, at least at the levels used.
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