The radiation effects of high energy electrons upon thermionic integrated circuits
Arguello, William R.
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Thermionic Integrated Circuit (TIC) devices use a hybrid of vacuum tube and integrated circuit technology. The integrated circuitry is fabricated on a sapphire (Al ; ,0- ; ) substrate. A device was irradiated to attempt to establish a total dose (measured in rad Si) of radiation to cause the TIC device to malfunction. The TIC device was irradiated using 30 and 100 Mev electrons provided bv the Naval Postgraduate School Linear Accelerator (LINAC). The device received a total dose of 1.8155x10s' rad Si during the course of the experiments. It continued to function normal lv throughout the irradiation study, so it is concluded that the device is not sensitive to radiation, at least at the levels used.
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