A report on the effects of neutron irradiation on GaAs semiconductors
reportoneffectso00call.pdf (2.848Mb)Abstract
the effects of neutron irradiation in GaAs MMICs and small signal FETs were investigated. Carrier concentration and mobility were measured as a function of fluence, doping and channel depth. The individual components of the MMICs were also measured. Device degradation was determined to be the result of a combination of decreases in carrier concentration and mobility in the FETs. Radiation hardness levels based on 20% degradation in gain and drain current were determined.
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.Collections
Related items
Showing items related by title, author, creator and subject.
-
The STEP Model: Characterizing Simultaneous Time Effects on Practice for Flight Simulator Performance Among Middle-Aged and Older Pilots
(HHS Public Access, 2015-09);Understanding the possible effects of the number of practice sessions (practice) and time between practice sessions (interval) among middle-aged and older adults in real world tasks has important implications for skill ... -
Design of Multi-Mission Spacecraft BUS
(1992);This paper investigates alternate control techniques for the attitude control of a three axis stabilized flexible communications satellite consisting of a large reflector and a solar array. The control configurations ... -
Modeling studies of the effects of wind forcing and thermohaline gradients on the California Current System
(1998);This process-oriented study uses a high-resolution, multi-level, primitive equation model to study the combined effects of wind forcing and thermohaline gradients on the ocean circulation of the California Current System ...
