A report on the effects of neutron irradiation on GaAs semiconductors

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Author
Callahan, John K.
Date
1987-06Advisor
Neighbours, John R.
Anderson, W.T.
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the effects of neutron irradiation in GaAs MMICs and small signal FETs were investigated. Carrier concentration and mobility were measured as a function of fluence, doping and channel depth. The individual components of the MMICs were also measured. Device degradation was determined to be the result of a combination of decreases in carrier concentration and mobility in the FETs. Radiation hardness levels based on 20% degradation in gain and drain current were determined.
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This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.Collections
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