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dc.contributor.advisorNeighbours, John R.
dc.contributor.advisorAnderson, W.T.
dc.contributor.authorCallahan, John K.
dc.dateJune 1987
dc.date.accessioned2012-11-27T00:23:59Z
dc.date.available2012-11-27T00:23:59Z
dc.date.issued1987-06
dc.identifier.urihttp://hdl.handle.net/10945/22457
dc.description.abstractthe effects of neutron irradiation in GaAs MMICs and small signal FETs were investigated. Carrier concentration and mobility were measured as a function of fluence, doping and channel depth. The individual components of the MMICs were also measured. Device degradation was determined to be the result of a combination of decreases in carrier concentration and mobility in the FETs. Radiation hardness levels based on 20% degradation in gain and drain current were determined.en_US
dc.description.urihttp://archive.org/details/areportoneffects1094522457
dc.format.extent42 p.en_US
dc.language.isoen_US
dc.rightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.en_US
dc.subject.lcshPhysicsen_US
dc.titleA report on the effects of neutron irradiation on GaAs semiconductorsen_US
dc.typeThesisen_US
dc.contributor.corporateNaval Postgraduate School (U.S.)
dc.contributor.departmentDepartment of Physics
dc.subject.authorGaAs MHICsen_US
dc.subject.authorCarrier concentrationen_US
dc.subject.authorMobilityen_US
dc.description.serviceLieutenant Commander, United States Navyen_US
etd.thesisdegree.nameM.S. in Physicsen_US
etd.thesisdegree.levelMastersen_US
etd.thesisdegree.disciplinePhysicsen_US
etd.thesisdegree.grantorNaval Postgraduate Schoolen_US
dc.description.distributionstatementApproved for public release; distribution is unlimited.


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