Experimental considerations of higher order parametric x-rays from silicon crystals of varying thicknesses

Abstract

Generation of parametric X-radiation (PXR) may be described as the Bragg scattering of virtual photons to 2dsin0(B), where 0(B) is the angle between the electronic beam and the crystal plane. Enhanced higher order parametric x-radiation from the <220> and <111> planes of silicon crystals of varying thicknesses were observed. Production of PXR of the order of N=1, and n=2 of the <200> n=1,n=3 and n=4 of the <111> planes of a 44 um and 320 um crystal were observed. Exploiting the formation and attenuation lengths of silicon crystals of various thicknesses, higher order x-radiation production is enhanced relative to the lower energy first order x-ray. Photons of 4.5 to 21 keV have been observed.