A computer study of channeling in silicon
Finno, Roy Stephen
Harrison, Don E., Jr.
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A computer simulation study of channeling in a diamond Lattice. The simulation was done for a xenon ion striking the (100), (100) or (111) surface of a silicon target. Potential functions for the Si-Si lattice bond and the Xe-Si interaction are postulated. the electronic stopping cross section for the (100)channel of silicon is estimated. This work is a continuation in the development of a computer model formulated at the USNPGS which takes into consideration the displacement of the atoms in the target lattice as well as inelastic energy losses by the primary ion. The lattice was not thermalized and only the repulsive portion of the lattice-lattice potential was utilized. Computer ranges are in good agreement with experimental data.
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