Noise characteristics of an avalanche photodiode
Kim, Eun Gi
Milne, Edmund A.
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The responsivity, noise equivalent power, specific detectivity, shot noise and multiplication noise of a RCA C30872 silicon reach-through avalanche photodiode were studied at 4 wavelengths 563.8 nm, 569.9 nm, 699.6 nm, and 826.2 nm. The detector noise was resolved into amplifier, shot and a multiplied leakage components as a function of the reverse bias voltage. Experimental results are discussed and it is concluded that this photodiode has an optimum reverse bias voltage of about 250 volt that maximizes the specific detectivity and minimizes the noise equivalent power. The avalanche photodiode excess noise factor was found to be 1.4-2.0 at low gain and increase to 9.17 at again of 440.