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dc.contributor.advisorWalters, D.L.
dc.contributor.authorKim, Eun Gi
dc.dateDecember 1984
dc.date.accessioned2013-01-23T22:09:58Z
dc.date.available2013-01-23T22:09:58Z
dc.date.issued1984-12
dc.identifier.urihttp://hdl.handle.net/10945/27162
dc.description.abstractThe responsivity, noise equivalent power, specific detectivity, shot noise and multiplication noise of a RCA C30872 silicon reach-through avalanche photodiode were studied at 4 wavelengths 563.8 nm, 569.9 nm, 699.6 nm, and 826.2 nm. The detector noise was resolved into amplifier, shot and a multiplied leakage components as a function of the reverse bias voltage. Experimental results are discussed and it is concluded that this photodiode has an optimum reverse bias voltage of about 250 volt that maximizes the specific detectivity and minimizes the noise equivalent power. The avalanche photodiode excess noise factor was found to be 1.4-2.0 at low gain and increase to 9.17 at again of 440.en_US
dc.description.urihttp://archive.org/details/noisecharacteris1094527162
dc.format.extent45 p.: ill.;28 cm.en_US
dc.language.isoen_US
dc.publisherMonterey, California. Naval Postgraduate Schoolen_US
dc.rightsCopyright is reserved by the copyright owner.en_US
dc.subject.lcshPhysicsen_US
dc.titleNoise characteristics of an avalanche photodiodeen_US
dc.typeThesisen_US
dc.contributor.secondreaderMilne, Edmund A.
dc.contributor.corporateNaval Postgraduate School (U.S.)
dc.contributor.schoolNaval Postgraduate School
dc.contributor.departmentPhysics
dc.subject.authorAvalanche Photodiodeen_US
dc.description.serviceMajor, Republic of Korea Air Forceen_US
etd.thesisdegree.nameM.S. in Physicsen_US
etd.thesisdegree.levelMastersen_US
etd.thesisdegree.disciplinePhysicsen_US
etd.thesisdegree.grantorNaval Postgraduate Schoolen_US
dc.description.distributionstatementApproved for public release; distribution is unlimited.


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