Evaluation of ferroelectric materials for memory applications
Download
Author
Josefson, Carl Elof
Date
1990-06Advisor
Panholzer, R.
Second Reader
Neighbours, J. R.
Metadata
Show full item recordAbstract
Ferroelectric materials have wide application in area such as piezoelectric transducers, pyroelectric detectors, and electro-optics, and now thin-film ferroelectric materials are being integrated with conventional semiconductor processes to produce memory devices. Memories based on this technology potentially offer nonvolatile data storage and extended read-write endurance in comparison with EEPROMs, without speed or power penalties. These memories are also radiation hard. Considerable interest in ferroelectric memory exists in the Department of Defense (DOD) because of these characteristics. However, several problems remain unsolved and no memory devices have been produced as yet. The physical mechanisms (as they are understood) are discussed, the claims made for the technology are examined, and the potential roadblocks, such as: cycle dependent fatigue, time dependent degradation of memory retention, and fabrication problems are evaluated.
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.Collections
Related items
Showing items related by title, author, creator and subject.
-
Ferroelectric memory devices and a proposed standardized test system design
Covelli, Javier M. (Monterey, California. Naval Postgraduate School, 1992-06);Ferroelectric bulk material devices have been in existence for over 20 years, Not until recently has there been fabrication techniques that consistently and feasibly produce thin film ferroelectric materials. The physical ... -
Considerations for space and Naval aircraft applications of ferroelectric memory
Vetter, Theodore Arnold (Monterey, California. Naval Postgraduate School, 1992-12);The purpose of this thesis is to introduce the reader to Ferroelectric memory and discuss considerations for possible space and Naval aviation applications. Ferroelectric memory's characteristics and basic mechanism are ... -
A microprocessor interface for the NM24CF04 serial-access ferroelectric memory.
Gonter, Thomas C. (Monterey, California. Naval Postgraduate School, 1991-12);The goal of this study was to demonstrate the feasibility of utilizing ferroelectric memory as a portion of main microprocessor memory. An interface between National Semiconductor's NM24CF04, a nonvolatile, serial-access, ...