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dc.contributor.advisorMichael, Sherif
dc.contributor.advisorBiblarz, Oscar
dc.contributor.authorAbrahamson, Stuart M.
dc.dateDecember 1995
dc.date.accessioned2013-04-29T22:48:48Z
dc.date.available2013-04-29T22:48:48Z
dc.date.issued1995-12
dc.identifier.urihttp://hdl.handle.net/10945/31266
dc.description.abstractThe study of radiation effects to electronics circuits has been ongoing almost as long as there have been satellites and spacecraft in space. The response to radiation over the planned life of the space system is of great concern to system designers. Operational amplifiers are one of the most basic elements in all electronic systems. This research examines radiation effects of part of a Metal Oxide Semiconductor (MOS) operational amplifier and is applicable to Complimentary MOS (CMOS) technology as well. More specifically, it is pertinent to MOS capacitors used to internally compensate op amps. First, a review of semiconductor theory is presented followed by a discussion of damage mechanisms to MOS capacitors and a brief look at operational amplifier fundamentals. MOS capacitors, constructed by previous research efforts using the MOSIS technique, were selected as the internally compensating elements for simple low pass filters. Using the Naval Postgraduate School linear accelerator, these capacitors were irradiated with pulsed electrons possessing energies of up to 26 MeV for varying times. In-situ measurements were taken to immediately determine the capacitance value via the measured filter break frequency as a function of fluence. Separate irradiation runs were performed on three MOSIS capacitors and were terminated upon filter failure. This research concludes with a hypothesis of the filter fallure mechanism and suggested areas for expansion of continuing research efforts. This is believed to be the first time such an experiment has been performed.en_US
dc.description.urihttp://archive.org/details/insitumeasuremen1094531266
dc.format.extent87 p.en_US
dc.language.isoen_US
dc.publisherMonterey, California. Naval Postgraduate Schoolen_US
dc.rightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.en_US
dc.titleIn-situ measurement of total dose radiation effects on parallel plate MOS capacitors using the NPS linear acceleratoren_US
dc.typeThesisen_US
dc.contributor.departmentElectrical Engineering
dc.contributor.departmentAstronautical Engineering
dc.description.funderNAen_US
dc.description.recognitionNAen_US
dc.description.serviceU.S. Navy (U.S.N.) author.en_US
etd.thesisdegree.nameM.S. in Electrical Engineeringen_US
etd.thesisdegree.nameM.S. in Astronautical Engineeringen_US
etd.thesisdegree.levelMastersen_US
etd.thesisdegree.disciplineElectrical Engineeringen_US
etd.thesisdegree.disciplineAstronautical Engineeringen_US
etd.thesisdegree.grantorNaval Postgraduate Schoolen_US


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