Low voltage operational amplifier using parasitic bipolar transistors in CMOS
Chunda, Jaime P.
MetadataShow full item record
In this research, a low voltage BiCMOS operational amplifier was built using parasitic bipolar transistors in bulk CMOS technology. Designed and analyzed using PSPICE circuit simulation software, the amplifier achieves a gain bandwidth product of 20.24 MHz with power supply voltages of +/- 2.5 V. The simulation proved that the BiCMOS amplifier will operate with power supplies as low as +/- 0.6 V. Using MAGIC VLSI software, a layout of the amplifier was made for eventual fabrication in the MOSIS 2.0 m CMOS process.
Showing items related by title, author, creator and subject.
Levin, Isaac (1975-06);An IF amplifier and detector were designed for a noncoherent MTI radar. The amplifier was designed to satisfy the following two requirements: A, The amplifier must not overload; saturation due to large signals is not ...
Song, G.; Kelly, B.; Agrawal, B.N. (1999);This paper presents the design and experiment results of active position control of a shape memory alloy (SMA) wires actuated composite beam. The composite beam is honeycomb structured with shape memory alloy wires embedded ...
Song, G.; Kelly, B.; Agrawal, B.N. (2000);This paper presents the design and the experimental result of the active position control of a shape memory alloy (SMA) wire actuated composite beam. The composite beam has a honeycomb structure with SMA wires embedded in ...