Indium gallium nitride multijunction solar cell simulation using silvaco atlas
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This thesis investigates the potential use of wurtzite Indium Gallium Nitride as photovoltaic material. Silvaco Atlas was used to simulate a quad-junction solar cell. Each of the junctions was made up of Indium Gallium Nitride. The band gap of each junction was dependent on the composition percentage of Indium Nitride and Gallium Nitride within Indium Gallium Nitride. The findings of this research show that Indium Gallium Nitride is a promising semiconductor for solar cell use.
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Newham, Wesley Scott. (Monterey California. Naval Postgraduate School, 2006-06);Silicon based semiconductor devices are rapidly approaching the theoretical limit of operation and are becoming unsuitable for future military requirements. The scope of semiconductor devices has been expanded by wide ...
Slepicka, Alois Allen (Monterey, California. U.S. Naval Postgraduate School, 1966-05);When the electric field in certain compound semiconductors exceeds a well-defined threshold value, the electrical current through the material becomes unstable. These instabilities may take the form of coherent Oscillations ...
Ong, Zi Xuan. (Monterey, California. Naval Postgraduate School, 2011-12);Multi-junction solar cells are an emerging technology that improves the conversion rate of solar energy. Indium Gallium Phosphide (InGaP) is commonly used as the top cell in multi-junction cells grown on Germanium (Ge) or ...