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Computer simulation of the sputtering process

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Author
Levy, Norman S.
Date
1965
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Abstract
The sputtering of Cu fcc (110), (100) and (111) surfaces by 1- to 10-keV A+ ions at normal incidence has been investigated by high-speed digital computer techniques. The interatomic repulsions are described by Born-Mayer potentials. The shape of the sputtering ratio curves are in close agreement with the data of Magnuson and Carlston. Ejection patterns in accord with experimental observations are predicted. There is evidence that the sputtering mechanism is not the result of momentum focusing.
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This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
URI
http://hdl.handle.net/10945/36982
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  • 1. Thesis and Dissertation Collection, all items

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    Computer Simulation of Sputtering II 

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