Computer simulation of the sputtering process
Levy, Norman S.
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The sputtering of Cu fcc (110), (100) and (111) surfaces by 1- to 10-keV A+ ions at normal incidence has been investigated by high-speed digital computer techniques. The interatomic repulsions are described by Born-Mayer potentials. The shape of the sputtering ratio curves are in close agreement with the data of Magnuson and Carlston. Ejection patterns in accord with experimental observations are predicted. There is evidence that the sputtering mechanism is not the result of momentum focusing.
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An investigation of cascade energy density effects using classical trajectory simulations of sputtering by molecular ions. Mason, William A. (Monterey, California. Naval Postgraduate School, 1983-06);The NPS computer simulation model was modified to study sputtering by molecular ions. The simulations were performed on a Cu(111) surface for normally incident O⁺₂ ions at 0.5, 1.25, 2.5, and 5.0 kev/ion. The ...
Harrison, Don E. Jr.; Moore, W.L. Jr.; Holcombe, H.T (1973-01-01);The conclusions of the first paper in this series have been confirmed by simulations in which the copper target is represented by a composite potential function consisting of a Born-Mayer repulsive potential segment, a ...
Holcombe, Horace Truman (Monterey, California ; Naval Postgraduate School, 1970-06);A self-contained computer simulation of sputtering from 20 keV incident ions is not possible with present computers. However, a simulation can be done by considering primary and secondary collisions separately. An ...