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dc.contributor.authorOh-ishi, K.
dc.contributor.authorZhilyaev, A. P.
dc.contributor.authorMcNelley, T. R.
dc.date.accessioned2014-08-29T17:22:36Z
dc.date.available2014-08-29T17:22:36Z
dc.date.issued2005-03-20
dc.identifier.citationMaterials Science and Engineering A, v. 410-411, 2005, pp.83-187
dc.identifier.urihttp://hdl.handle.net/10945/43161
dc.description.abstractThe influence of strain path during equal channel angular pressing (ECAP) has been evaluated in pure aluminum by orientation imaging microscopy (OIM) and transmission electron microscopy (TEM). The material was examined after four pressing operations by route BC in a 90◦ die, or eight pressing operations by route BC in a 135◦ die. The von Mises equivalent strains were essentially the same for these two ECAP procedures. The microtexture data indicate that the distortion during ECAP corresponds to a simple shear in a direction approximately parallel to die-channel exit and on a plane perpendicular to the flow plane. For both procedures, the OIM data reveal prominent meso-scale band-like features. Lattice orientations in each band correspond to a texture orientation but the particular combinations of orientations depend upon ECAP die angle.High-angle boundaries in the structure correspond to interfaces between the bands.en_US
dc.publisherElsevieren_US
dc.rightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. As such, it is in the public domain, and under the provisions of Title 17, United States Code, Section 105, may not be copyrighted.en_US
dc.titleEffect of strain path on evolution of deformation bands during ECAP of pure aluminumen_US
dc.typeArticleen_US
dc.contributor.corporateNaval Postgraduate School
dc.contributor.departmentDepartment of Mechanical and Astronautical Engineering
dc.subject.authorAluminumen_US
dc.subject.authorEqual channel angular pressing (ECAP)en_US
dc.subject.authorTextureen_US
dc.subject.authorSimple shearen_US
dc.subject.authorOrientation imaging microscopy (OIM)en_US


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