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dc.contributor.authorAlves, Fabio
dc.contributor.authorGrbovic, Dragoslav
dc.contributor.authorKearney, Brian
dc.contributor.authorLavrik, Nickolay V.
dc.contributor.authorKarunasiri, Gamani
dc.date2013-06
dc.date.accessioned2014-12-10T19:07:52Z
dc.date.available2014-12-10T19:07:52Z
dc.date.issued2013-06
dc.identifier.citationAlves, Fabio, et al. "Bi-material terahertz sensors using metamaterial structures." Optics express 21.11 (2013): 13256-13271.
dc.identifier.urihttp://hdl.handle.net/10945/44106
dc.descriptionThe article of record as published may be found at http://dx.doi.org/10.1364/OE.21.013256en_US
dc.description.abstractIn this paper we report on the design, fabrication and characterization of terahertz (THz) bi-material sensors with metamaterial absorbers. MEMS fabrication-friendly SiOx and Al are used to maximize the bimetallic effect and metamaterial absorption at 3.8 THz, the frequency of a quantum cascade laser illumination source. Sensors with different configurations were fabricated and the measured absorption is near 100% and responsivity is around 1.2 degrees which agree well with finite element simulations. The results indicate the potential of using these detectors to fabricate focal plane arrays for real time THz imaging.en_US
dc.description.sponsorshipONR and NRO
dc.rightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.en_US
dc.titleBi-material terahertz sensors using metamaterial structuresen_US
dc.contributor.departmentPhysics
dc.subject.authorFar infrared or terahertzen_US
dc.subject.authorMetamaterialsen_US
dcterms.typeArticle


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