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dc.contributor.authorHaegel, Nancy M.
dc.contributor.authorWilliams, Scott E.
dc.contributor.authorFrenzen, C.L.
dc.contributor.authorScandrett, Clyde
dc.date.accessioned2014-12-12T23:50:23Z
dc.date.available2014-12-12T23:50:23Z
dc.date.issued2010
dc.identifier.citationSemicond. Sci. Technol., Volume 25, (2010) 055017 (6pp)
dc.identifier.urihttp://hdl.handle.net/10945/44177
dc.descriptionThe article of record as published may be found at http://dx.doi.org/10.1088/0268-1242/25/5/055017en_US
dc.description.abstractVariations in minority carrier transport properties associated with networks of misfit dislocations have been measured using a unique optical technique in p-type GaInP grown on Ge...en_US
dc.rightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United Statesen_US
dc.titleMinority carrier lifetime variations associated with misfit dislocation networks in heteroepitaxial GaInPen_US
dc.typeArticleen_US
dc.contributor.departmentPhysics
dc.contributor.departmentApplied Mathematics
dc.description.funderThis work was supported by the National Science Foundation under grant no DMR-0526330 and by the DNDO Academic Research Initiative under grant no ARI/NSF 083007.en_US


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