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dc.contributor.authorHaegel, Nancy M.
dc.contributor.authorWilliams, Scott E.
dc.contributor.authorFrenzen, C.L.
dc.contributor.authorScandrett, Clyde
dc.date.accessioned2014-12-12T23:50:23Z
dc.date.available2014-12-12T23:50:23Z
dc.date.issued2010
dc.identifier.citationSemicond. Sci. Technol., Volume 25, (2010) 055017 (6pp)
dc.identifier.urihttp://hdl.handle.net/10945/44177
dc.descriptionThe article of record as published may be found at http://dx.doi.org/10.1088/0268-1242/25/5/055017en_US
dc.description.abstractVariations in minority carrier transport properties associated with networks of misfit dislocations have been measured using a unique optical technique in p-type GaInP grown on Ge...en_US
dc.rightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. As such, it is in the public domain, and under the provisions of Title 17, United States Code, Section 105, may not be copyrighted.en_US
dc.titleMinority carrier lifetime variations associated with misfit dislocation networks in heteroepitaxial GaInPen_US
dc.typeArticleen_US
dc.contributor.departmentPhysics
dc.contributor.departmentApplied Mathematics
dc.description.funderThis work was supported by the National Science Foundation under grant no DMR-0526330 and by the DNDO Academic Research Initiative under grant no ARI/NSF 083007.en_US


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