Enhanced Near-Bandgap Response in InP Nanopillar Solar Cells
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The effect of nanopillar texturing on the performance of InP solar cells is investigated. Maskless, lithography-free reactive ion etching of InP nanopillars improves the open-circuit voltage, reduces refl ectance over a broad spectral range, and enhances the near-bandgap response compared to a fl at, non-textured cell with comparable refl ectance in the infrared. Electron-beam induced current measurements indicate an increased effective minority carrier collection length. The response at short wavelengths decreases due to the formation of a defective surface layer with strong non-radiative recombination. Plasma oxidation and wet etching partially restore the blue response resulting in a power conversion effi ciency of 14.4%.
The article of record as published may be found at http://dx.doi.org/10.1002/aenm.201400061
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