Transport imaging for contact-free measurements of minority carrier diffusion in GaN, GaN/AIGaN, and GaN/InGaN core-shell nonwires
Cole, R. Adam
Talin, A. Alec
Wang, George T.
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Minority carrier diffusion lengths Ld are measured for GaN, GaN/AlGaN, and GaN/InGaN core-shell nanowires using a technique based on imaging of recombination luminescence. The effect of shell material on transport properties is measured. An AlGaN shell produces Ld values in excess of 1 m and a relative insensitivity to wire diameter. An InGaN shell reduces effective diffusion length, while a dependence of Ld on diameter is observed for uncoated nanowires.
The article of record as published may be found at http://dx.doi.org/10.1063/1.3573832
RightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
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