Comparison of analytic and numerical models with commercially available simulation tools for the prediction of semiconductor freeze-out and exhaustion
Reeves, Derek E.
Pieper, Ron J.
Michael, Sherif N.
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This thesis reports on three procedures and the associated numerical results for obtaining semiconductor majority carrier concentrations when subjected to a temperature sweep. The capability of predicting the exhaustion regime boundaries of a semiconductor is critical in understanding and exploiting the full potential of the modern integrated circuit. An efficient and reliable method is needed to accomplish this task. Silvaco International's semiconductor simulation software was used to predict temperature dependent majority carrier concentration for a semiconductor cell. Comparisons with analytical and numerical MATLAB-based schemes were made. This was done for both Silicon and GaAs materials. Conditions of the simulations demonstrated effect known as Bandgap Narrowing.
RightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
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