A novel approach for the modeling of advanced photovoltaic devices using the SILVACO / ATLAS virtual wafer fabrication tools
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In this paper a new method for developing a realistic model of any type of solar cell is presented. Taking into account the high cost of research and experimentation involved with the development of advanced cells, we present here this novel methodology. In our opinion, the introduction of this modeling technique to the photovoltaic community will prove to be of great importance in aiding in the design and development of advanced solar cells. Two models of a single GaAs and an InGaP/GaAs/Ge multi-junction solar cell are prepared and are fully simulated. The major stages of the process are explained and the simulation results are compared to published experimental data to demonstrate the accurate results produced by the model utilizing this technique. The flexibility of the proposed methodology is illustrated and example results are shown throughout the whole process, demonstrating some of the different parameters effects on the model performance.
The article of record as published may be located at http://dx.doi.org/10.1016/j.solmat.2004.07.050
RightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
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