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dc.contributor.authorTsutagawa, Michael H.
dc.contributor.authorMichael, Sherif
dc.date.accessioned2015-09-10T22:31:38Z
dc.date.available2015-09-10T22:31:38Z
dc.date.issued2009
dc.identifier.urihttp://hdl.handle.net/10945/46459
dc.description.abstractThis paper presents the design parameters for a triple junction InGaP/GaAs/Ge space solar cell with a simulated maximum efficiency of 36.28% using Silvaco ATLAS Virtual Wafer Fabrication tool. Design parameters include the layer material, doping concentration, and thicknesses.en_US
dc.publisherIEEEen_US
dc.rightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. As such, it is in the public domain, and under the provisions of Title 17, United States Code, Section 105, may not be copyrighted.en_US
dc.titleTriple Junction InGaP/GaAs/Ge Solar Cell Optimization: The Design Parameters for a 36.2% Efficient Space Cell Using Silvaco ATLAS Modeling & Simulationen_US
dc.typeArticleen_US
dc.contributor.departmentElectrical and Computer Engineeringen_US


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