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dc.contributor.authorPhelps, Ronald L.
dc.date.accessioned2015-09-10T22:52:30Z
dc.date.available2015-09-10T22:52:30Z
dc.date.issued1993
dc.identifier.citation1993 Nonvolatile Memory Technology Reviewen_US
dc.identifier.urihttp://hdl.handle.net/10945/46460
dc.description.abstractCapacitors manufactured from thin-film ferroelectric material (FCAPs) are the building block of ferroelectric devices such as sensors and non-volatile memories. The purpose of the NPS-001 FERRO experiment is to determine if thin-film ferroelectric material in its basic capacitor form, can withstand the rigors of space and thus help lay the groundwork for integrated ferroelectronic use in space.en_US
dc.publisherIEEEen_US
dc.rightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.en_US
dc.titleNPS-001 Ferro, A Thin-Film Ferroelectric Space Experimenten_US
dc.typeArticleen_US
dc.contributor.departmentSpace Systems Academic Groupen_US


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