keV particle bombardment of semiconductors: a molecular-dynamics simulation

Abstract

Molecular-dynamics simulations have been performed for the keV particle bombardment of Si[110] and Si[100] using a many-body potential developed by Tersoff. Energy and angle distributions are presented along with an analysis of the important ejection mechanisms. We have developed a computer logic that only integrates the equations of motions of the atoms that are struck, thus decreasing the computer time by a factor of 3 from a complete molecular-dynamics simulation.