keV particle bombardment of semiconductors: a molecular-dynamics simulation
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Authors
Smith, Roger
Harrison, Don E. Jr.
Garrison, Barbara J.
Subjects
Advisors
Date of Issue
1989-07-01
Date
Publisher
American Physical Society
Language
Abstract
Molecular-dynamics simulations have been performed for the keV particle bombardment of Si[110] and Si[100] using a many-body potential developed by Tersoff. Energy and angle distributions are presented along with an analysis of the important ejection mechanisms. We have developed a computer logic that only integrates the equations of motions of the atoms that are struck, thus decreasing the computer time by a factor of 3 from a complete molecular-dynamics simulation.
Type
Article
Description
Series/Report No
Department
Physics
Organization
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
Financial support of the National Research Council (R.S.), the Office of Naval Research, the National Science Foundation, the IBM Program for the Support of the Materials and Processing Sciences and the Camille and Henry Dreyfus Foundation....Penn State University supplied a generous grant of computer time for this work.
Funder
Format
9 p.
Citation
Physical Review B, v. 40, no. 1, July 1, 1989, pp. 93-101
Distribution Statement
Approved for public release; distribution is unlimited.
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.