Effects of low-temperature buffer-layer thickness and growth temperature on the SEE sensitivity of GaAs HIGFET circuits
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Heavy-ion Single Event Effects (SEE) test results reveal the roles of growth temperature and buffer layer thickness in the use of a low-temperature grown GaAs (LT GaAs) buffer layer for suppressing SEE sensitivity in GaAs HIGFET circuits.
The article of record as published may be found at http://dx.doi.org/10.1109/23.659049
RightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
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