Historical perspective on radiation effects in III–V devices

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Authors
Weatherford, Todd R.
Anderson, Wallace T. Jr.
Subjects
Compound semiconductor
Gallium arsenide
Radiation effects
Advisors
Date of Issue
2003-06
Date
Publisher
IEEE
Language
Abstract
A historical review of radiation effects on III–V semiconductor devices is presented. The discussion ranges from examining early material and device studies to present-day understanding of III–V radiation effects. The purpose of this paper is to provide present researchers with a summary of discoveries and lessons learned from previous failures and successes.
Type
Article
Description
The article of record as published may be found at http://dx.doi.org/10.1109/TNS.2003.813124
Series/Report No
Department
Electrical and Computer Engineering
Organization
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
Funder
Format
Citation
IEEE Transactions on Nuclear Science, V. 50, No. 3, pp. 704-710, June 2003
Distribution Statement
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
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