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dc.contributor.authorWeatherford, Todd R.
dc.contributor.authorAnderson, Wallace T. Jr.
dc.date.accessioned2016-05-24T22:44:59Z
dc.date.available2016-05-24T22:44:59Z
dc.date.issued2003-06
dc.identifier.citationIEEE Transactions on Nuclear Science, V. 50, No. 3, pp. 704-710, June 2003en_US
dc.identifier.urihttp://hdl.handle.net/10945/48703
dc.descriptionThe article of record as published may be found at http://dx.doi.org/10.1109/TNS.2003.813124en_US
dc.description.abstractA historical review of radiation effects on III–V semiconductor devices is presented. The discussion ranges from examining early material and device studies to present-day understanding of III–V radiation effects. The purpose of this paper is to provide present researchers with a summary of discoveries and lessons learned from previous failures and successes.en_US
dc.publisherIEEEen_US
dc.rightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.en_US
dc.titleHistorical perspective on radiation effects in III–V devicesen_US
dc.typeArticleen_US
dc.contributor.corporateNaval Postgraduate School (U.S.)en_US
dc.contributor.departmentElectrical and Computer Engineeringen_US
dc.subject.authorCompound semiconductoren_US
dc.subject.authorGallium arsenideen_US
dc.subject.authorRadiation effectsen_US


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