Low temperature (LT) grown GaAs buffer layers for III-V semiconductor processes
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Low Temperature Grown (LTG) GaAs buffers have been shown to eliminate backgating, reduce subthreshold leakage, provide ultrashort carrier lifetimes [I], and radiation hardness . However, undoped LTG buffers have shown poor reliability, poor RF performance , and inconsistent lot-to-lot properties. Recent p-doped LT GaAs buffers promise thermally stable material to withstand changes during annealing steps, plus improved performance over undoped LT GaAs buffers.
The article of record as published may be found at http://dx.doi.org/10.1109/GAAS.1999.80372421st Annual GaAs IC Symposium, 17-20 October 1999, pp. 47-50, Monterey, CA, USA