Show simple item record

dc.contributor.authorWeatherford, T.R.
dc.date.accessioned2016-05-26T20:56:55Z
dc.date.available2016-05-26T20:56:55Z
dc.date.issued1999
dc.identifier.urihttp://hdl.handle.net/10945/48740
dc.descriptionThe article of record as published may be found at http://dx.doi.org/10.1109/GAAS.1999.803724en_US
dc.description21st Annual GaAs IC Symposium, 17-20 October 1999, pp. 47-50, Monterey, CA, USA
dc.description.abstractLow Temperature Grown (LTG) GaAs buffers have been shown to eliminate backgating, reduce subthreshold leakage, provide ultrashort carrier lifetimes [I], and radiation hardness [2]. However, undoped LTG buffers have shown poor reliability, poor RF performance [3], and inconsistent lot-to-lot properties. Recent p-doped LT GaAs buffers promise thermally stable material to withstand changes during annealing steps, plus improved performance over undoped LT GaAs buffers.en_US
dc.publisherIEEEen_US
dc.rightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.en_US
dc.titleLow temperature (LT) grown GaAs buffer layers for III-V semiconductor processesen_US
dc.typeArticleen_US
dc.contributor.corporateNaval Postgraduate School (U.S.)en_US
dc.contributor.departmentElectrical and Computer Engineeringen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record