Modeling single-event effects in a complex digital device
Clark, Kenneth A.
Ross, Alan A.
Loomis, Hersch H.
Weatherford, Todd R.
Fouts, Douglas J.
Buchner, Stephen P.
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A methodology to quantify the impact of SEEs on complex digital devices has been developed. This methodology is based on the SEE State-Transition Model and was validated by radiation testing of a complex digital device.
The article of record as published may be found at http://dx.doi.org/10.1109/TNS.2003.821793IEEE Transactions on Nuclear Science, V. 50, No. 6, pp. 2069-2080, December 2003
RightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
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