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dc.contributor.authorClark, Kenneth A.
dc.contributor.authorRoss, Alan A.
dc.contributor.authorLoomis, Hersch H.
dc.contributor.authorWeatherford, Todd R.
dc.contributor.authorFouts, Douglas J.
dc.contributor.authorBuchner, Stephen P.
dc.contributor.authorMcMorrow, Dale
dc.date.accessioned2016-05-26T21:15:33Z
dc.date.available2016-05-26T21:15:33Z
dc.date.issued2003-12
dc.identifier.urihttp://hdl.handle.net/10945/48741
dc.descriptionThe article of record as published may be found at http://dx.doi.org/10.1109/TNS.2003.821793en_US
dc.descriptionIEEE Transactions on Nuclear Science, V. 50, No. 6, pp. 2069-2080, December 2003
dc.description.abstractA methodology to quantify the impact of SEEs on complex digital devices has been developed. This methodology is based on the SEE State-Transition Model and was validated by radiation testing of a complex digital device.en_US
dc.publisherIEEEen_US
dc.rightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.en_US
dc.titleModeling single-event effects in a complex digital deviceen_US
dc.typeArticleen_US
dc.contributor.corporateNaval Postgraduate School (U.S.)en_US
dc.contributor.departmentElectrical and Computer Engineeringen_US
dc.subject.authorFault modelingen_US
dc.subject.authorFault propagationen_US
dc.subject.authorRadiation effectsen_US
dc.subject.authorSingle-event effectsen_US
dc.subject.authorsingle-effects transientsen_US
dc.subject.authorSingle-event upsetsen_US
dc.subject.authorTransient propagationen_US


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