Publication:
Radiation effects in high speed III-V integrated circuits

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Authors
Weatherford, Todd R.
Subjects
Radiation
GaAs
InP
GaN
SiC
Compound semiconductors
Total dose
Displacement damage
Single event effects
Advisors
Date of Issue
2003
Date
Publisher
World Scientific
Language
Abstract
The types of applications affected by radiation effects in W-V devices have significantly changed over the last four decades. For most applications W-V ICs have provided sufficient radiation hardness. Some expectations for hardened soft error applications did not materialize until much later. Years of research defined that not only material properties. but device structures. layout practices and circuit design influenced how m-v devices were susceptible to certain radiation effects. The highest performance ill-V ICs due to their low power-speed energy products will provide challenges in ionizing radiation environments from sea level to space.
Type
Article
Description
The article of record as published may be found at http://dx.doi.org/10.1142/S0129156403001612
International Journal of High Speed Electronics and Systems, v. 13, p. 277 (2003).
Series/Report No
Department
Electrical and Computer Engineering
Organization
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
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Funder
Format
Citation
Distribution Statement
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
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