Radiation effects in high speed III-V integrated circuits
Abstract
The types of applications affected by radiation effects in W-V devices have significantly changed
over the last four decades. For most applications W-V ICs have provided sufficient radiation
hardness. Some expectations for hardened soft error applications did not materialize until much later.
Years of research defined that not only material properties. but device structures. layout practices
and circuit design influenced how m-v devices were susceptible to certain radiation effects. The
highest performance ill-V ICs due to their low power-speed energy products will provide challenges
in ionizing radiation environments from sea level to space.
Description
The article of record as published may be found at http://dx.doi.org/10.1142/S0129156403001612
International Journal of High Speed Electronics and Systems, v. 13, p. 277 (2003).
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.Collections
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