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dc.contributor.authorWeatherford, Todd R.
dc.date.accessioned2016-05-26T21:38:25Z
dc.date.available2016-05-26T21:38:25Z
dc.date.issued2003
dc.identifier.urihttp://hdl.handle.net/10945/48744
dc.descriptionThe article of record as published may be found at http://dx.doi.org/10.1142/S0129156403001612en_US
dc.descriptionInternational Journal of High Speed Electronics and Systems, v. 13, p. 277 (2003).
dc.description.abstractThe types of applications affected by radiation effects in W-V devices have significantly changed over the last four decades. For most applications W-V ICs have provided sufficient radiation hardness. Some expectations for hardened soft error applications did not materialize until much later. Years of research defined that not only material properties. but device structures. layout practices and circuit design influenced how m-v devices were susceptible to certain radiation effects. The highest performance ill-V ICs due to their low power-speed energy products will provide challenges in ionizing radiation environments from sea level to space.en_US
dc.publisherWorld Scientificen_US
dc.rightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.en_US
dc.titleRadiation effects in high speed III-V integrated circuitsen_US
dc.typeArticleen_US
dc.contributor.corporateNaval Postgraduate School (U.S.)en_US
dc.contributor.departmentElectrical and Computer Engineeringen_US
dc.subject.authorRadiationen_US
dc.subject.authorGaAsen_US
dc.subject.authorInPen_US
dc.subject.authorGaNen_US
dc.subject.authorSiCen_US
dc.subject.authorCompound semiconductorsen_US
dc.subject.authorTotal doseen_US
dc.subject.authorDisplacement damageen_US
dc.subject.authorSingle event effectsen_US


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