Radiation effects in high speed III-V integrated circuits
dc.contributor.author | Weatherford, Todd R. | |
dc.date.accessioned | 2016-05-26T21:38:25Z | |
dc.date.available | 2016-05-26T21:38:25Z | |
dc.date.issued | 2003 | |
dc.identifier.uri | http://hdl.handle.net/10945/48744 | |
dc.description | The article of record as published may be found at http://dx.doi.org/10.1142/S0129156403001612 | en_US |
dc.description | International Journal of High Speed Electronics and Systems, v. 13, p. 277 (2003). | |
dc.description.abstract | The types of applications affected by radiation effects in W-V devices have significantly changed over the last four decades. For most applications W-V ICs have provided sufficient radiation hardness. Some expectations for hardened soft error applications did not materialize until much later. Years of research defined that not only material properties. but device structures. layout practices and circuit design influenced how m-v devices were susceptible to certain radiation effects. The highest performance ill-V ICs due to their low power-speed energy products will provide challenges in ionizing radiation environments from sea level to space. | en_US |
dc.publisher | World Scientific | en_US |
dc.rights | This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States. | en_US |
dc.title | Radiation effects in high speed III-V integrated circuits | en_US |
dc.type | Article | en_US |
dc.contributor.corporate | Naval Postgraduate School (U.S.) | en_US |
dc.contributor.department | Electrical and Computer Engineering | en_US |
dc.subject.author | Radiation | en_US |
dc.subject.author | GaAs | en_US |
dc.subject.author | InP | en_US |
dc.subject.author | GaN | en_US |
dc.subject.author | SiC | en_US |
dc.subject.author | Compound semiconductors | en_US |
dc.subject.author | Total dose | en_US |
dc.subject.author | Displacement damage | en_US |
dc.subject.author | Single event effects | en_US |