Publication:
SEE analysis of digital InP-based HBT circuits at gigahertz frequencies

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Authors
Weatherford, Todd R.
Schiefelbein, Peter K.
Subjects
Heterojunction bipolar transistors
Indium phosphide integrated circuits
Radiation effects
Single-event effects (SEEs)
Advisors
Date of Issue
2001-12
Date
Publisher
IEEE
Language
Abstract
A device/circuit simulation is used to analyze a gigahertz clocked emitter-coupled logic circuit being perturbed by a single event. Results provide an understanding of charge collection in the heterojunction bipolar transistor. A technique for single-event hardening is demonstrated by simulation.
Type
Article
Description
The article of record as published may be found at http://dx.doi.org/10.1109/23.983160
IEEE Transactions on Nuclear Science, V. 48, No. 6, pp. 1980-1986, December 2001
Series/Report No
Department
Electrical and Computer Engineering
Other Units
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
Funder
Format
Citation
Distribution Statement
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
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