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dc.contributor.authorWeatherford, T.R.
dc.contributor.authorWhitaker, J.
dc.contributor.authorMeyer, S.
dc.contributor.authorBustamante, M.
dc.contributor.authorThomas, S. III
dc.contributor.authorElliott, K.
dc.date2000
dc.date.accessioned2016-06-08T20:42:28Z
dc.date.available2016-06-08T20:42:28Z
dc.date.issued2000
dc.identifier.citationWeatherford, T. R., et al. "Single event induced voltage transients within InP HBT circuits." Government Microcircuit Applications Conference (GOMAC 2000), Digest of Papers. 2000.en_US
dc.identifier.urihttp://hdl.handle.net/10945/48891
dc.description.abstractVoltage transients internal to an InP HBT integrated circuit are measured with picosecond resolution. Results show that the single event "shorts" the transistor terminals and the transient response can produce multiple errors at gigahertz frequencies.en_US
dc.format.extent4 p.en_US
dc.rightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.en_US
dc.titleSingle Event Induced Voltage Transients within lnP HBT Circuitsen_US
dc.typeConference Paperen_US
dc.contributor.corporateNaval Postgraduate School (U.S.)en_US


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