Doping dependence and anisotropy of minority electron mobility in molecular beam epitaxy-grown p type GaInP
Haegel, N. M.
Norman, A. G.
MetadataShow full item record
Direct imaging of minority electron transport via the spatially resolved recombination luminescence signature has been used to determine carrier diffusion lengths in GaInP as a function of doping. Minority electron mobility values are determined by performing time resolved photoluminescence measurements of carrier lifetime on the same samples. Values at 300 K vary from~2000 to 400 cm2/V s and decrease with increasing doping. Anisotropic diffusion lengths and strongly polarized photoluminescence are observed, resulting from lateral composition modulation along the  direction. We report anisotropic mobility values associated with carrier transport parallel and perpendicular to the modulation direction.
The article of record as published may be found at http://dx.doi.org/10.1063/1.4902316