Direct imaging of anisotropic minority-carrier diffusion in ordered GaInP
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An all-optical technique has been used to provide the first direct measurement of anisotropic minority-carrier diffusion in an ordered alloy of GaInP. Direct imaging of the minority-carrier diffusion distribution resulting from generation at a quasipoint source is obtained using an optical microscope coupled to a scanning electron microscope. Minority-carrier diffusion lengths ranging from 3 to 60 !m are measured by this technique in double heterostructures of GaInP, GaAs, and GaInAs, providing a key parameter of interest to the performance of state-of-the-art triple junction solar cells. Here we show a direct measurement of anisotropy in minority-carrier mobility in ordered GaInP, which is evident in the oval-shaped distribution of the recombination luminescence. A factor of 1.6 increase in minority electron mobility along the #110$ major axis is reported.
The article of record as published may be found at http://dx.doi.org/10.1063/1.3068196
RightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
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