Direct imaging of anisotropic minority-carrier diffusion in ordered GaInP
MetadataShow full item record
An all-optical technique has been used to provide the first direct measurement of anisotropic minority-carrier diffusion in an ordered alloy of GaInP. Direct imaging of the minority-carrier diffusion distribution resulting from generation at a quasipoint source is obtained using an optical microscope coupled to a scanning electron microscope. Minority-carrier diffusion lengths ranging from 3 to 60 !m are measured by this technique in double heterostructures of GaInP, GaAs, and GaInAs, providing a key parameter of interest to the performance of state-of-the-art triple junction solar cells. Here we show a direct measurement of anisotropy in minority-carrier mobility in ordered GaInP, which is evident in the oval-shaped distribution of the recombination luminescence. A factor of 1.6 increase in minority electron mobility along the #110$ major axis is reported.
The article of record as published may be found at http://dx.doi.org/10.1063/1.3068196
RightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
Showing items related by title, author, creator and subject.
Williams, Scott Edward (Monterey California. Naval Postgraduate School, 2008);A quantitative, contact-free method for extracting minority carrier diffusion length is used to measure the relatively small variations in diffusion length associated with dislocation bands in mismatched epitaxy in the ...
Cole, Richard Adam (Monterey, California. Naval Postgraduate School, 2010);A novel technique for imaging minority carrier diffusion in semiconductor nanostructures has been applied to the characterization of GaN and ZnO nanowires and nanobelts. Near field scanning optical microscopy (NSOM) is ...
Ong, Zi Xuan. (Monterey, California. Naval Postgraduate School, 2011-12);Multi-junction solar cells are an emerging technology that improves the conversion rate of solar energy. Indium Gallium Phosphide (InGaP) is commonly used as the top cell in multi-junction cells grown on Germanium (Ge) or ...