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dc.contributor.authorMichael, Sherif
dc.contributor.authorCypranowski, Corinne
dc.contributor.authorAnspaugh, Bruce
dc.dateJan 01, 1990en_US
dc.date.accessioned2018-09-27T00:07:04Z
dc.date.available2018-09-27T00:07:04Z
dc.date.issued1990-01
dc.identifier.other19910057350
dc.identifier.urihttp://hdl.handle.net/10945/60145
dc.identifier.urihttps://ntrs.nasa.gov/search.jsp?R=19910057350
dc.descriptionSEE A91-41876en_US
dc.description21st IEEE Photovoltaic Specialists Conference; May 21-25, 1990; Kissimmee, FL; United Statesen_US
dc.descriptionApproved for public release, distribution unlimiteden_US
dc.description.abstractThe preliminary results of a novel approach to low-temperature annealing of previously irradiated indium phosphide and gallium arsenide solar cells are reported. The technique is based on forward-biased current annealing. The two types of III-V solar cells were irradiated with 1-MeV electrons to a fluence level of (1-10) x 10 to the 14th electrons/sq cm. Several annealing attempts were made, varying all conditions. Optimum annealing was achieved when cells were injected with minority currents at a constant 90 C. The current density for each type of cell was also determined. Significant recovery of degraded parameters was achieved in both cases. However, the InP cell recovery notably exceeded the recovery in GaAs cells. The recovery is thought to be caused by current-stimulated reordering of the radiator-induced displacement damage. Both types of cell were then subjected to several cycles of irradiation and annealing. The results were also very promising. The significant recovery of degraded cell parameters at low temperature might play a major role in considerably extending the end of life of future spacecraft.en_US
dc.rightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.en_US
dc.titleForward-biased current annealing of radiation degraded indium phosphide and gallium arsenide solar cellsen_US
dc.typeConference Paper
dc.contributor.corporateJet Propulsion Laboratory
dc.subject.authorANNEALINGen_US
dc.subject.authorGALLIUM ARSENIDESen_US
dc.subject.authorINDIUM PHOSPHIDESen_US
dc.subject.authorRADIATION DAMAGEen_US
dc.subject.authorSOLAR CELLSen_US
dc.subject.authorVOLT-AMPERE CHARACTERISTICSen_US
dc.subject.authorCARRIER INJECTIONen_US
dc.subject.authorELECTRON IRRADIATIONen_US
dc.subject.authorMINORITY CARRIERSen_US


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