Show simple item record

dc.contributor.authorAlves, F.
dc.contributor.authorGrbovic, D.
dc.contributor.authorArruda, J.
dc.contributor.authorSantos, R.
dc.contributor.authorKarunasiri, Gamani
dc.date.accessioned2018-10-18T23:26:37Z
dc.date.available2018-10-18T23:26:37Z
dc.date.issued2014-08
dc.identifier.citationAlves, F., et al. "Improving sensitivity and defying residual stress in MEMS bi-material terahertz sensors with metamaterial structures and self-leveling configuration." 2014 8th International Congress on Advanced Electromagnetic Materials in Microwaves and Optics. IEEE, 2014.
dc.identifier.urihttp://hdl.handle.net/10945/60330
dc.description.abstractIn this paper we report on techniques to improve sensitivity and reduce the residual stress and its effects on THz MEMS bi-material sensors, using metamaterial structures and self-leveling configurations. Structural metamaterial films made of aluminum and silicon-rich silicon oxide bring the THz absorption close to 100% while making the absorption area relatively flat. Multi-folded bi-material and thermal insulating legs compensate the residual stress of the films, leveling the sensors, making them attractive to be used in THz imaging systems with external optical readout.en_US
dc.format.extent3 p.
dc.publisherMetaMorphoseen_US
dc.rightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.en_US
dc.titleImproving sensitivity and defying residual stress in MEMS bi-material terahertz sensors with metamaterial structures and self-leveling configurationen_US
dc.typeArticleen_US
dc.contributor.corporateNaval Postgraduate School (U.S.)en_US
dc.contributor.departmentPhysicsen_US


Files in this item

Thumbnail

This item appears in the following Collection(s)

Show simple item record