Near- and mid-infrared detection using GaAs/InₓGa₁−ₓAs/InᵧGa₁−ᵧAs multiple step quantum wells
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A dual-band multiple-quantum-well infrared photodetector capable of simultaneously detecting wavelengths near 0.9 µm and 10 µm has been fabricated using GaAs/InGaAs step quantum wells. The detection of the near (0.82–0.95 µmd)- and mid (9–11 µmd)-infrared wavelength bands was achieved using interband and intersubband transitions. The measured peak responsivities of the near- and mid-infrared bands were 0.4 A/W and 1 A/W, respectively, at 0.8 V bias across the device. The broken symmetry of the step quantum well allows transitions from the ground states of heavy and light holes to the first-excited electron state allowing the photoexcited carriers to be efficiently collected. The estimated values of the detectivities for near- and mid-infrared bands at 40 K and 0.8 V bias are approximately 4.5 x 10⁹ cm(Hz)½ /W and 1.1 x 10¹º cm(Hz)½ /W, respectively.
The article of record as published may be found at http://dx.doi.org/10.1063/1.1871350
RightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
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