ANALYSIS OF RADIATION EFFECTS ON GALLIUM NITRIDE ZIRCONIUM OXIDE METAL OXIDE SEMICONDUCTOR CAPACITORS
Reasoner Blasch, Connor M.
Weatherford, Todd R.
Anderson, Travis , U.S. Naval Research Laboratory
Porter, Matthew A.
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In this work, Gallium Nitride Zirconium oxide metal oxide semiconductor capacitors were exposed to a 40MeV proton beam and a 15MeV Argon heavy ion beam of radiation. Characterization of each device was done using an Agilent B1500A, switch matrix, custom-printed circuit board while using a LabVIEW program to analyze the Capacitance-Voltage (C-V), Capacitance-Frequency (C-F), and Current-Voltage (I-V) measurement prior to and post exposure. Each reticle's C-V measurement and its hysteresis was then compared pre- and post-exposure for effects. Testing concluded with a time-dependent dielectric breakdown analysis. Results show that radiation exposure shifts the capacitance of the device and affects the hysteresis in its C-V measurement. Initial time-dependent dielectric breakdown data shows that devices exposed to certain fluences of radiation will extend the time it takes before oxide breakdown.
RightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States
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