Doping-Assisted Defect Control In Compound Semiconductors
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Authors
Specht, Petra
Weber, Eicke R.
Weatherford, Todd Russell
Subjects
Advisors
Date of Issue
2006-07-11
Date
Publisher
The Regents of the University of California, Oakland, CA (US);
The United States of America as represented by the Secretary of the Navy, Washington, DC (US)
Language
Abstract
The present invention relates to the production of thin film
epilayers of III-V and other compounds with acceptor
doping wherein the acceptor thermally stabilizes the epilayer,
stabilize the naturally incorporated native defect population
and therewith maintain the epilayer's beneficial properties
upon annealing among other advantageous effects. In
particular, balanced doping in which the acceptor concentration
is similar to (but does not exceed) the antisite defects
in the as-grown material is shown to be particularly advantageous
in providing thermal stability, high resistivity and
ultrashort trapping times. In particular, MBE growth of
LT-GaAs epilayers with balanced Be doping is described in
detail. The growth conditions greatly enhance the materials
reproducibility (that is, the yield in processed devices). Such
growth techniques can be transferred to other III-V materials
if the growth conditions are accurately reproduced.
Materials produced herein also demonstrate advantages in
reproducibility, reliability and radiation hardening.
Type
Patent
Description
Patent
Series/Report No
Department
Organization
Naval Postgraduate School (U.S.)
Identifiers
NPS Report Number
Sponsors
Funder
Format
Citation
Distribution Statement
Rights
This publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.