Doping-Assisted Defect Control In Compound Semiconductors
Weber, Eicke R.
Weatherford, Todd Russell
MetadataShow full item record
The present invention relates to the production of thin film epilayers of III-V and other compounds with acceptor doping wherein the acceptor thermally stabilizes the epilayer, stabilize the naturally incorporated native defect population and therewith maintain the epilayer's beneficial properties upon annealing among other advantageous effects. In particular, balanced doping in which the acceptor concentration is similar to (but does not exceed) the antisite defects in the as-grown material is shown to be particularly advantageous in providing thermal stability, high resistivity and ultrashort trapping times. In particular, MBE growth of LT-GaAs epilayers with balanced Be doping is described in detail. The growth conditions greatly enhance the materials reproducibility (that is, the yield in processed devices). Such growth techniques can be transferred to other III-V materials if the growth conditions are accurately reproduced. Materials produced herein also demonstrate advantages in reproducibility, reliability and radiation hardening.
RightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.
Showing items related by title, author, creator and subject.
Tschanz, Steven J. (Monterey California. Naval Postgraduate School, 2005-09);Silicon Blocked Impurity Band (BIB) detectors are state-of-the-art devices to detect light in the near to mid infrared range (5-40 Ã¦m). Numerical modeling of BIB detectors is performed using a four-region finite difference ...
Ong, Zi Xuan. (Monterey, California. Naval Postgraduate School, 2011-12);Multi-junction solar cells are an emerging technology that improves the conversion rate of solar energy. Indium Gallium Phosphide (InGaP) is commonly used as the top cell in multi-junction cells grown on Germanium (Ge) or ...
Moore, David A. (Monterey California. Naval Postgraduate School, 2005-06);The application of a thyristor (a four-layer P1-N1-P2-N2 semiconductor structure) as an optical detector is explored. Based on laboratory experiments which demonstrated that this device produces a pulse-mode output to ...