An approach for studying the creep/sliding behavior of planar metal-silicon interface
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There has been considerable recent interest in interfacial sliding during creep of multi-phase materials. The effect of interfacial creep is crucial for the deformation of metal-matrix composites and thin film systems, where the isostrain condition between the constituent components is often violated. An experimental approach has been developed to investigate the deformation kinetics of planar interfaces, using a double-shear specimen geometry where the interfaces are loaded in shear. In addition to shear stresses, the apparatus is capable of applying normal stresses (tension or compression) on the interface. In the experimental arrangement, the relative displacements of the constituents at the top and bottom of the specimen are measured independently with high precision using a resistance gauge and a capacitance sensor, respectively. The experimental set-up is suitable for both constant displacement-rate and constant-load creep tests, and can be operated up to a temperature of 300 deg C. In the current study, preliminary creep tests were conducted on planar aluminum-silicon interfaces prepared by diffusion bonding in argon atmosphere at 565 deg C. During the tests, the interfaces were subjected to nominally constant shear stresses ranging from 0.8-2 MPa, with the test temperatures ranging from 100-200 deg C. In all cases, the interface was found to slide via a time-dependent relaxation mechanism, indicating the suitability of the proposed test for studying interfacial sliding. Further studies are needed to determine the mechanistic details of interfacial sliding.
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Peterson, Keith A. (Monterey, California. Naval Postgraduate School, 2002., 2002-09);In many applications, large shear stresses develop at interfaces between dissimilar materials during thermo-mechanical excursions, when there is a significant difference in the coefficient of thermal expansion between them. ...
Parks, Carl L. (Monterey, California. Naval Postgraduate School, 2004-09);Large shear stresses often develop at the interface between dissimilar materials in microelectronic devices, when they are subjected to thermo-mechanical excursions. These stresses can facilitate diffusionally accommodated ...
Peterson, Keith A. (Monterey, California. Naval Postgraduate School, 2000-06);An apparatus for measuring the steady state creep behavior of interfaces in aluminum-silicon-aluminum multilayered specimens has been assembled. In the experiment scheme, a double-shear specimen geometry was used to load ...