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dc.contributor.advisorMichael, Sherif
dc.contributor.authorBoyer, Lynn L., IV
dc.dateJune 1996
dc.date.accessioned2012-08-09T19:23:02Z
dc.date.available2012-08-09T19:23:02Z
dc.date.issued1996-06
dc.identifier.urihttp://hdl.handle.net/10945/8838
dc.descriptionApproved for public release; distribution is unlimited.en_US
dc.description.abstractThis thesis reports the results of a laser annealing technique used to remove defect sites from radiation damaged indium phosphide on silicon MOCVD grown solar cells. This involves the illumination of damaged solar cells with a continuous wave laser to produce a large forward-biased current. The InP/Si cells were irradiated with 1 MeV electrons to a given fluence, and tested for degradation. Light from an argon laser was used to illuminate four cells with an irradiance of 2.5 W/sq cm, producing a current density 3 to 5 times larger than AMO conditions. Cells were annealed at 19 deg C with the laser and at 25 deg C under AMO conditions. Annealing under laser illumination of n/p-type cells resulted in recovery of 48%. P/n type cells lost 4 to 12% of the assumed degradaton. Annealing under AMO conditions resulted in power recovery of 70% in n/p type cells. P/n-type cells recovered approximately 16% of lost power. Results indicate that significant power recovery results from the annealing of defects within n/p type InP/Si solar cells..en_US
dc.description.urihttp://www.archive.org/details/powerrecoveryofr00boye
dc.format.extent133 p.en_US
dc.language.isoen_US
dc.publisherMonterey, California. Naval Postgraduate Schoolen_US
dc.rightsThis publication is a work of the U.S. Government as defined in Title 17, United States Code, Section 101. Copyright protection is not available for this work in the United States.en_US
dc.titlePower recovery of radiation damaged MOCVD grown indium phosphide on silicon solar cells through argon-ion laser annealingen_US
dc.typeThesisen_US
dc.contributor.secondreaderPieper, Ron J.
dc.contributor.corporateNaval Postgraduate School
dc.contributor.departmentDepartment of Electrical and Computer Engineering
dc.subject.authorIndium Phosphideen_US
dc.subject.authorSolar Cellsen_US
dc.subject.authorAnnealingen_US
dc.subject.authorLasersen_US
dc.description.serviceLieutenant, United States Navyen_US
etd.thesisdegree.nameM.S. in Electrical Engineeringen_US
etd.thesisdegree.levelMastersen_US
etd.thesisdegree.disciplineElectrical Engineeringen_US
etd.thesisdegree.grantorNaval Postgraduate Schoolen_US


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